AVS 63rd International Symposium & Exhibition | |
Thin Film | Wednesday Sessions |
Session TF+MI-WeA |
Session: | Thin Films for Magnetic and Optical Applications |
Presenter: | Allen Owen, University of Alabama |
Authors: | A.G. Owen, University of Alabama S. Gupta, University of Alabama |
Correspondent: | Click to Email |
Hard disk drive storage media is trending towards both smaller physical size and greater storage capacity, there by increasing the areal density of the magnetic storage media. Bit patterning shows potential as a method for increasing this areal density. A block copolymer template can be used to provide an etch mask for bit patterning a magnetic thin film. A statistical design of experiments was carried out to optimize the effect of nanopatterning via ion milling Co/Pd multilayers for PS-PFS block copolymers. The design of experiments varied the etch angle and etch time during ion milling. Samples that were sputter-deposited with Co/Pd multilayered thin films were spin-coated with PFS block copolymer and vacuum furnace annealed at 140 °C for 48 hours at a pressure of ~5 x 10-5 Torr. After vacuum furnace annealing, the films were ashed in oxygen plasma to remove the PS, leaving the PFS spheres as masks for the subsequent ion milling. The stack used was Pd5/[Co0.3Pd1.0]14 /Pd 5 nm sputter deposited onto a Si substrate. The as deposited coercivity was ~1.3 kOe. After ion milling for 2 min at an angle of 45°, the coercivity was found to be ~0.6 kOe. Ion milling at 45° for 4 min resulted in a coercivity of ~0.07 kOe. This is in comparison with previous experiments using thermal annealing in atmosphere and solvothermal annealing with heptane, where the coercivity increased at ~4 min at the same 45° ion milling angle. The difference can be explained by the fact that for the previous experiments, the stack used was Ta5/[Co0.3Pd1.0]14/Ta5 nm. The Ta capping layer must be more resistant to ion milling than Pd, which means the ion milling times must be adjusted to transfer the bit pattern to the media.