AVS 63rd International Symposium & Exhibition
    Thin Film Monday Sessions
       Session TF+EM-MoA

Invited Paper TF+EM-MoA5
ALD for Interfacial Engineering of Energy Conversion Devices

Monday, November 7, 2016, 3:00 pm, Room 105A

Session: ALD for Energy Conversion and Storage
Presenter: Neil P. Dasgupta, University of Michigan, Ann Arbor
Correspondent: Click to Email

Recently, there has been a dramatic increase in research of nanoscale materials for energy conversion and storage applications due to several advantageous features such as high surface areas, short transport distances, novel optical phenomena, and tunable material properties. However, with these benefits come challenges. In particular, the ability to precisely control the properties of surfaces and heterogeneous interfaces at the nanoscale limits the performance of many of these devices, and requires novel approaches. This problem becomes increasingly important as dimensions decrease, as the surface-to-volume ratios continually increase with decreasing feature size.

One technique that has been increasingly explored for surface and interfacial engineering of nanostructured energy conversion and storage devices is Atomic Layer Deposition (ALD). This gas-phase process allows for highly conformal deposition of a wide variety of materials with sub-nm precision in material thickness and tunable chemical composition. A wide range of materials, including oxides, sulfides, and metals can be deposited by ALD. The combination of conformality and thickness control of ALD facilitates precise tuning of the electronic, optical, thermal, and chemical properties to optimize their interfaces in energy conversion devices.

This talk will present several examples of using ALD to fabricate highly-controlled interfaces for energy conversion and storage devices. Examples include batteries [1], photovoltaics [2-3], and photoelectrochemical cells [4-5]. The key theme linking these studies is that through deterministic control of interfacial layer composition, thickness, crystallinity, and morphology, we can “program” properties such as charge transfer resistance, catalytic activity, and chemical stability. This control enables interfacial materials engineering to optimize both device efficiency and lifetime. The importance of fully understanding ALD surface chemistry will be discussed from a theoretical and experimental perspective. The talk will conclude with a perspective on future directions and challenges for widespread commercial adaption of these technologies.

[1] E. Kazyak, K. N. Wood and N. P. Dasgupta, Chem. Mater.27, 6457 (2015)

[2] A. B. Wong, S. Brittman, Y. Yu, N. P. Dasgupta and P. Yang, Nano Lett.15, 4096 (2015).

[3] S. Brittman, Y. Yoo, N. P. Dasgupta, S.-I. Kim, B. Kim and P. Yang, Nano Lett.14, 4665 (2014).

[4] N. P. Dasgupta, C. Liu, S. Andrews, F. B. Prinz and P. Yang, J. Am. Chem. Soc.135, 12932 (2013).

[5] J. Resasco, N. P. Dasgupta, J. Rosell, J. Guo and P. Yang, J. Am. Chem. Soc.136, 10521 (2014).