AVS 63rd International Symposium & Exhibition
    Thin Film Monday Sessions
       Session TF+EM-MoA

Paper TF+EM-MoA2
Ultrafast Triggered Transient Energy Storage by Atomic Layer Deposition Into Porous Silicon for Integrated Transient Electronics

Monday, November 7, 2016, 2:00 pm, Room 105A

Session: ALD for Energy Conversion and Storage
Presenter: Anna Douglas, Vanderbilt University
Authors: A.E. Douglas, Vanderbilt University
N. Muralidharan, Vanderbilt University
R.E. Carter, Vanderbilt University
K. Share, Vanderbilt University
C.L. Pint, Vanderbilt University
Correspondent: Click to Email

We demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g−1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics.