Secondary Ion Mass spectroscopy (SIMS) analysis is heavily used in semiconductor, lighting/LED, solar/PV industries for routine manufacturing and research/development due to its versatility, fast turnaround time and excellent accuracy/precision. There are some factors that affect the accuracy of SIMS quantification. Fractionation is one of them. It is very important for isotope abundance measurement and for applying RSFs from one isotope to another. If fractionation is ignored during SIMS quantification by applying RSFs from one isotope to another, over 10% error could be introduced. Boron is a useful dopant for such semiconductors as silicon, germanium, and silicon carbide. Having one fewer valence electron than the host atom, it donates a hole resulting in p-type conductivity. Then to accurately monitor Boron concentration in semiconductor manufacturing process is very important. In this study, the Boron isotope fractionation was investigated on Cameca IMS WF, Cameca 7f, Quad SIMS. A methodology to quantify Boron was demonstrated by applying RSF from 10B implanted standard to unknown sample by monitoring 11B.