Paper SS+2D-WeM13
Feature Scale Simulation for Materials Processing

Wednesday, November 9, 2016, 12:00 pm, Room 104D

Modern materials processing often includes complex chemistries and surface interactions, and variety of species incoming to the wafer from gas and/or plasma in the chamber. It also often involves many time-steps, each one utilizing different chemistry and different gas/plasma parameters resulting in time-varying composition of fluxes coming to the wafer, and different energy and angular distributions of incoming species. Chemically or physically active species interact with material surfaces, generally resulting in etching, deposition, and implantation, and such processes might even happen together at the same time. The FPS3D feature scale simulator [1-3] is capable of handling very different and complex cases due to its special structure and numerical techniques, from atomic layer etching and atomic layer deposition to large-scale Bosch processing. Numerical models of surface and molecular interactions are flexible enough to describe most general cases. For this presentation, we selected three types of simulation cases. The first type considers simulation of mostly etching and implantation, such as during Si etching by chlorine-argon plasma. The 2nd type considers ALE (atomic layer etch) when etching is done by a cyclic process of surface passivation/activation with the following process of etching/removal of a single atomic layer per cycle or per a few cycles, allowing ultimate processing accuracy. The 3rd type of simulations considers deposition cases, such as Cu seed layer deposition. Some results will be presented for 2D simulations and some others – for 3D simulations.

References:

[1] P. Moroz, IEEE Trans. on Plasma Science, 39 (2011) 2804.

[2] P. Moroz, D. J. Moroz, ECS Transactions, 50 (2013) 61.

[3] P. Moroz, D. J. Moroz, J. Physics: CS 550 (2014) 012030.