| AVS 63rd International Symposium & Exhibition | |
| Scanning Probe Microscopy Focus Topic | Tuesday Sessions |
| Session SP-TuP |
| Session: | Scanning Probe Microscopy Poster Session |
| Presenter: | Alireza Fali, Georgia State University |
| Authors: | A. Fali, Georgia State University S. Gamage, Georgia State University D. Seidlitz, Georgia State University I. Kankanamge, Georgia State University N. Dietz, Georgia State University Y. Abate, Georgia state university |
| Correspondent: | Click to Email |
Ternary InGaN compound semiconductors are of interest for many device applications such as light-emitting diodes, laser diodes, solar cells, etc., because they cover a broad spectral range from deep ultraviolet to near infrared as a function of the composition. This study focuses on nanoscopy of patterned structures of InGaN compound. To achieve this goal, InGaN film has been grown on top of the InN substrate. Scattering-type scanning near-field optical microscopy was used for nano-spectroscopic studies in the mid infrared spectral region of various thickness and composition of In1-xGaxN nanolayers grown on InN substrates.