| AVS 63rd International Symposium & Exhibition | |
| Scanning Probe Microscopy Focus Topic | Monday Sessions |
| Session SP+AS+MI+NS+SS-MoM |
| Session: | Advances in Scanning Probe Microscopy |
| Presenter: | Yohannes Abate, Georgia State University |
| Authors: | Y. Abate, Georgia State University D. Seidlitz, Georgia State University A. Fali, Georgia State University S. Gamage, Georgia State University V.E. Babicheva, Georgia State University V.S. Yakovlev, Georgia State University M.I. Stockman, Georgia State University R. Collazo, North Carolina State University D. Alden, North Carolina State University N. Deitz, Georgia State University |
| Correspondent: | Click to Email |
We investigate nanoscale phase separation on single InGaN QDs and nanostructures by using high-resolution s-SNIN (scattering type scanning near-field infrared nanoscopy) technique in the mid-IR spectral region. We fabricated patterned nanolayers down to few atomic layers thick that allow determination of the near-field infrared response of InGaN/InN/GaN heterostructures quantitatively. We first calibrate the near-field IR amplitude contrast as a function of composition and thickness of the semiconductor nanolayers and QDs. We then use this quantitative leads to identify phase separation in single QDs. An advanced theoretical model is developed to guide the experimental results. Unlike previous models that consider the probe conical tip as approximate point dipoles or spheroids, our model considers the full geometry of the tip and all the sample and substrate layers.