| AVS 63rd International Symposium & Exhibition | |
| Advanced Surface Engineering | Tuesday Sessions |
| Session SE+MS+TF-TuA |
| Session: | Innovations in PVD, CVD, Atmospheric Pressure Plasma and Other Surface Technologies |
| Presenter: | Lukasz Borowik, CEA, LETI, MINATEC Campus, France |
| Authors: | L. Borowik, CEA, LETI, MINATEC Campus, France Y. Almadori, CEA, LETI, MINATEC Campus, France N. Chevalier, CEA, LETI, MINATEC Campus, France J.-C. Barbé, CEA, LETI, MINATEC Campus, France |
| Correspondent: | Click to Email |
The dewetting of ultrathin silicon layers, induced by the thermal budget, is an issue to develop Silicon On Insulator (SOI) and Silicon Germanium On Insulator (SGOI) based technologies. However, dewetting can be controlled to obtain well-arranged agglomerates with similar size or even inhibited. This experimental study aims at demonstrating: the effect of the strain, surface contamination, ion sputtering on the dewetting mechanism, and further applications of dewetting thanks to interfacial reaction between agglomerates and the silicon dioxide. For that purpose, we present the results obtained on: (1) (001) oriented ultrathin (8-22 nm) silicon layers on silicon dioxide, (2) (001) oriented 12 nm silicon-germanium layers on silicon dioxide. In order to understand the dewetting mechanism, samples were heated up to ~800°C under ultra-high vacuum (1×10-9 mBar) during tens of minutes. The dewetted samples were characterized by Atomic Force Microscopy (AFM) to put in evidence the influence of the different factors on dewetting mechanism.
In first part of our presentation we will present various methods to control dewetting process by using different parameters such as: strained silicon, [1] surface contamination [2] or argon pre-sputtering. [3] These parameters allow tuning agglomerates size, shape and density. In second part of the talk we will show possible applications of dewetting to form porous silicon dioxide via agglomerates interfacial reaction, and finally how to master stoichiometry of silicon germanium agglomerates. [4] All these methods are promising since permit an easy and fast implementation, it is thus of real interest, since it opens up Si and SiGe agglomerates with tuned Ge concentration to application in innovative technologies.
This work was performed in the frame of the ANR LOTUS project. The measurements were realized on the CEA Minatec Nanocharacterization Platform (PFNC).
References:
[1] Ł. Borowik et al. Journal of applied physics 114, 063502 (2013)
[2] Ł. Borowik et al. Thin solid films 527, 133–136 (2013)
[3] F. Leroy et al. Surface Science Reports accepted
[4] Y. Almadori et al., 120, 7412–7420 (2016)