AVS 63rd International Symposium & Exhibition
    Advanced Surface Engineering Wednesday Sessions
       Session SE+2D+EM-WeA

Paper SE+2D+EM-WeA7
Ferroelectric Thin Films for Memory Applications

Wednesday, November 9, 2016, 4:20 pm, Room 101D

Session: Multifunctional Thin Films and Coatings
Presenter: Joyprokash Chakrabartty, Institut national de la recherche scientifique (INRS), Canada
Correspondent: Click to Email
Ferroelectric (FE) oxides draw attention in science community because of its spontaneous switchable polarization often used in electronic devices. FEs are earth abundant, easy to synthesis and low degradation of electronic properties while exposed to room atmosphere. One of its promising applications is in computer memory devices. FEs function as memory by storing data in its two polarization states normally defined as up and down state. However the challenges lie in enhancing data bit density at room temperature. Here we show four step ferroelectric polarization switching in BiFeO3(BFO)/SrRuO3(SRO)/BiMnO3(BMO) heterostructure thin films which act as FE memory devices. All crystalline films are grown on (100) oriented Niobium doped SrTiO3 (NSTO) single crystal substrates by pulsed laser deposition. Our experimental results show a promising device concept, unique in FE memories that can enhance the data storage capacity in heterostucture capacitor devices at room temperature.