| AVS 63rd International Symposium & Exhibition | |
| Novel Trends in Synchrotron and FEL-Based Analysis Focus Topic | Tuesday Sessions |
| Session SA+2D+AC+AS+TF-TuM |
| Session: | Applications of Synchrotron-based Techniques to 2D Materials (8:00-10:00 am)/Complex Functional Materials and Heterostructures (11:00 am-12:20 pm) |
| Presenter: | Victor Aristov, ISSP RAS, Chernogolovka, Russia, Russian Federation |
| Authors: | V.Y. Aristov, ISSP RAS, Chernogolovka, Russia, Russian Federation H.-C. Wu, BIT, Beijing, China O.V. Molodtsova, DESY, Hamburg, Germany S.V. Babenkov, DESY, Hamburg, Germany A.N. Chaika, ISSP RAS, Chernogolovka, Russia, Russian Federation |
| Correspondent: | Click to Email |
The results of atomically resolved scanning tunneling microscopy, low energy electron diffraction, low energy electron microscopy, micro-LEED and angle resolved photoelectron spectroscopy studies of graphene synthesized on cubic-SiC will be presented. Uniform few layer graphene was fabricated on SiC/Si wafers using Si-atom sublimation followed by SiC surface layer graphitization during high-temperature annealing in ultrahigh vacuum. Using the new dynamic-XPS end-station, based on the Argus spectrometer installed on the high-brilliance soft X-ray P04 beamline at PETRA III (DESY) one can control layer-by-layer graphene growth in real time following the evolution of the photoemission spectra with an acquisition time of ~ 0.1 sec/spectrum. Recording spectra during graphene growth on the SiC/Si(001) wafer, one can stop the process as soon as the desired number of graphene layers is reached. Angle-resolved photoemission measurements allowed us to extract the information about the electronic structure and the stacking order of the few-layer graphene on SiC(001). The preferential directions of the nanodomain boundaries coincide with the directions of carbon atomic chains on the SiC(001)-c(2x2) reconstruction, fabricated prior to graphene synthesis. Electrical measurements conducted on the vicinal SiC(001) samples demonstrate the opening of a transport gap in the nanostructured trilayer graphene. Our measurements demonstrate that the self-aligned periodic NBs can induce a charge transport gap up to 1.3 eV at low temperatures. The transport gap opening produces high current on-off ratio of 104. This development may lead to new tuneable electronic nanostructures made from graphene on cubic-SiC, opening up opportunities for a wide range of new applications.
This work was supported by the RAS, RFBR grants No 140200949 and 140201234, by the BMBF-Project No. 05K12GU2, PSP-Element No. U4606BMB1211, by a Marie Curie IIF grant No 12/IA/1264, by SPP 1459 of DFG.