| AVS 63rd International Symposium & Exhibition | |
| Nanometer-scale Science and Technology | Tuesday Sessions |
| Session NS-TuP |
| Session: | Nanometer-scale Science & Technology Poster Session |
| Presenter: | MiguelAngel Melendez-Lira, Cinvestav-IPN, Mexico |
| Authors: | R. Escobedo-Alcaraz, Cinvestav-IPN, Mexico C. Atzin-Mondragon, Cinvestav-IPN, Mexico A. Hernandez-Hernandez, Escuela Superior de Apan, Mexico A. Garcia-Sotelo, Cinvestav-IPN, Mexico M. Melendez-Lira, Cinvestav-IPN, Mexico |
| Correspondent: | Click to Email |
The roughness associated with the sputtering deposition process has been employed to explore the possibility to produce ZnO nanoparticles embedded within a silicon oxide matrix on soda-lime glass and p-silicon substrates. Silicon dioxide and metallic Zn films were deposited employing silicon and zinc targets. An oxygen rich working plasma was employed. Oxygen content of the working plasma was modulated through argon partial pressure. A sequential deposition of SiO2/Zn/SiO2 films was employed ; SiO2 layer was produced at 400 °C while deposition temperature of Zn layer was changed between 100 and 500 °C. Results of the chemical, structural and electronic properties are presesented. The Results indicated the successful production of ZnO with properties depending on deposition temperature. X-ray diffraction characterization do not shown the presence of metallic zinc. Secondary ion mass spectroscopy shown an interdifussion of zinc toward the SiO2 matrix. TEM micrographs indicated the presence of ZnO nanoparticles. XPS corroborates the ZnO formation under specific growth parameters. Photoluminescence emission at room temperature for samples grown on silicon substrates was not observed. Electrical transport properties are discussed on terms of deposition parameters.
*: Partially funded by CONACyT-Mexico