| AVS 63rd International Symposium & Exhibition | |
| Nanometer-scale Science and Technology | Monday Sessions |
| Session NS-MoM |
| Session: | Nanopatterning and Nanofabrication + 3D |
| Presenter: | Lamia Nouri, CEA, LETI, MINATEC Campus, France |
| Authors: | L.N. Nouri, CEA, LETI, MINATEC Campus, France N.P. Posseme, CEA, LETI, MINATEC Campus, France S.L. LANDIS, CEA, LETI, MINATEC Campus, France F.G. GAILLARD, CEA, LETI, MINATEC Campus, France F.M. MILESI, CEA, LETI, MINATEC Campus, France |
| Correspondent: | Click to Email |
Silicon patterning is a one of the most important steps in nano/micro fabrication, especially for mico/nano electro-mechanical systems (MEMS/NEMS), optoelectronic devices etc ... The fabrication schemes that microelectronics had boosted for decades for the production of integrated circuits, (based essentially on layering and planar patterning stacks of semiconductors, metals, and dielectrics) do not meet the new structuration’s requirements. Indeed, for the new emerging fields which may involve complex 3D patterns, the structuration becomes more challenging and requires several complex and expensive patterning processes such as gray-scale electron beam lithography, laser ablation, focused ion beam lithography, two photon polymerization and dry etching techniques.
In this work, we propose a straightforward technique for realizing 3D structuration intended for silicon based materials (Si, SiN, SiOCH …). This structuration technique is based on ion implantation and selective wet etching .
In a first step a pattern is performed by lithography on a substrate, then ion implantation is performed through the resist mask in order to create localized modifications in the material, thus the pattern is transferred into the subjacent layer. Finally, after the resist stripping, a selective wet etching is carried out to remove selectively the modified material regarding the non-modified one. The type of implanted ions and wet etching baths depend on the morphology of the substrate.
In this study we have demonstrated the feasibility of this new 3D structuration process on Silicon and SiOCH. The mechanisms understanding involved during both implantation and wet etching processes will be presented through characterizations by photoluminescence spectroscopy, Raman spectroscopy and Secondary Ion Mass Spectrometry (SIMS) for silicon samples, and ellipso-porosimetry, Fourier Transform InfraRed spectroscopy (FTIR) for SiOCH samples.