AVS 63rd International Symposium & Exhibition
    Nanometer-scale Science and Technology Monday Sessions
       Session NS-MoM

Paper NS-MoM1
Fabrication and Characterization of Carbon Nanotube-Based Electronic Devices

Monday, November 7, 2016, 8:20 am, Room 101D

Session: Nanopatterning and Nanofabrication + 3D
Presenter: Zhigang Xiao, Alabama A&M University
Authors: Z. Xiao, Alabama A&M University
S. Budak, Alabama A&M University
A. Kassu, Alabama A&M University
X. Crutcher, Alabama A&M University
T. Strong, Alabama A&M University
J. Johnson, Alabama A&M University
R. Hammond, Alabama A&M University
J. Gray, Alabama A&M University
A. Reynolds, Alabama A&M University
R. Moten, Alabama A&M University
Correspondent: Click to Email
Single-walled carbon nanotubes (SWCNTs) are used widely in fabricating nanoelectronic devices because of their unique electrical properties. We report the fabrication of carbon nanotube field-effect transistors (CNTFETs)-based inverter and ring oscillator electronic circuits using the dielectrophoresis (DEP)-aligned single-walled carbon nanotube mesh networks. The electrical property of the fabricated CNTFET-based devices was measured. The CNTFET-based inverter shown excellent electrical transfer characteristics, while the CNTFET-based ring oscillator demonstrated oscillation characteristics, denoting that the CNTFET-based circuits can function well for the application of electronic circuits. The DEP-based fabrication of carbon nanotube electronic circuits is wafer-scale, and compatible with the integrated circuit (IC) fabrication.