| AVS 63rd International Symposium & Exhibition | |
| Nanometer-scale Science and Technology | Monday Sessions |
| Session NS-MoA |
| Session: | Nanophotonics, Plasmonics, and Energy |
| Presenter: | Prithviraj Deshmukh, NCA&T State University |
| Authors: | P. Deshmukh, NCA&T State University P. Kasanaboina, NCA&T State University C. Reynolds Jr., North Carolina State University Y. Liu, North Carolina State University S. Iyer, NCA&T State University |
| Correspondent: | Click to Email |
Bandgap tuning beyond 1.3 µm in GaAsSb based nanowires by incorporation of dilute amount of N is reported, for realizing nanoscale optoelectronic devices in the telecommunication wavelength region. Vertical GaAs/GaAsSbN/GaAs core-shell configured nanowires are grown on Si (111) substrates using plasma assisted molecular beam epitaxy. Effects of N incorporation and thickness of the shell layers on the micro-photoluminescence spectral peak shifts have been studied. Annealing in N2 ambient led to enhanced spectral intensity, which is attributed to the annihilation of defects. Shifts and changes in the spectral shapes of the Raman spectra prior to and after annealing have been used to ascertain the nature of the defects being annihilated during the growth. I-V measurements also provided further support to the annihilation of predominantly point defects on annealing. Results from the transmission electron microscopy study on the planar defects will also be presented.