AVS 63rd International Symposium & Exhibition
    Magnetic Interfaces and Nanostructures Monday Sessions
       Session MI+2D+AC-MoA

Paper MI+2D+AC-MoA2
Spin-Polarized Scanning Tunneling Microscopy of a Two-Dimensional Ferromagnetic Semiconductor at Room-Temperature

Monday, November 7, 2016, 2:00 pm, Room 101C

Session: Magnetism and Spin Orbit Effects at Interfaces and Surfaces: Recent Experimental and Theoretical Advances
Presenter: Yingqiao Ma, Ohio University
Authors: Y.M. Ma, Ohio University
A.R. Smith, Ohio University
A. Barral, Centro At´omico Constituyentes, GIyA, CNEA, Argentina
V. Ferrari, Centro At´omico Constituyentes, GIyA, CNEA, Argentina
Correspondent: Click to Email

Ferromagnetic semiconductors are very promising materials for the spintronic applications, as they are good spin-polarized carrier sources and easy to be integrated into semiconductor devices. The search for ferromagnetic semiconductors with Curie temperature above the room-temperature has been a long-standing goal, since the Curie temperature Tc of most ferromagnetic semiconductors are at the cryogenic level with little possibility of improvement, which hinders their future practical spintronic applications.

Here, we observed the ferromagnetic domain structure at room-temperature on a GaN-based two-dimensional MnGaN semiconducting surface alloy, using spin-polarized scanning tunneling microscopy/spectroscopy which is sensitive to the surface magnetic nanostructures and can completely rule out the extrinsic origin of the ferromagnetism such as magnetic elements segregation by its ultimate spatial resolution. In contrast to the randomly doped dilute magnetic semiconductors, the two-dimensional surface structure has a unique and well-ordered hexagonal-like Mn √3 x √3 - R30° symmetry. The total density of states of the Mn √3 x √3 - R30° structure calculated by the density functional theory agree well with our normalized differential tunneling dI/dV spectroscopy, which clearly reveal the spin-polarized and spin-split Mn surface density of states peaks and prove the semiconducting nature of the surface as the normalized dI/dV goes to zero at the Fermi level. By applying a small magnetic field to the sample, the magnetic hysteresis is mapped out, which further proves its ferromagnetic nature. In conclusion, we demonstrated the room-temperature ferromagnetic nature of the two-dimensional Mn √3 x √3 - R30° structure, which makes it a promising material for future realistic magnetic storage, field-controlled, and quantum computing nano spintronic devices.