AVS 63rd International Symposium & Exhibition
    Electronic Materials and Photonics Thursday Sessions
       Session EM-ThP

Paper EM-ThP9
Investigation of Electro-Optical and Chemical properties InN epilayer grown on Ga-face GaN by RF-MOMBE

Thursday, November 10, 2016, 6:00 pm, Room Hall D

Session: EMPD Poster Session
Presenter: Chien-Nan Hsiao, Instrument Technology Research Center, National Applied Research Laboratories, Taiwan, Republic of China
Authors: W.-C. Chen, Instrument Technology Research Center, National Applied Research Laboratories, Taiwan, Republic of China
C.-N. Hsiao, Instrument Technology Research Center, National Applied Research Laboratories, Taiwan, Republic of China
Correspondent: Click to Email
Epitaxial indium nitride layers were grown on gallium nitride/c-sapphire by radio frequency metal-organic molecular beam epitaxy. We discussed the effect of V/III flow ratios on the Electro-Optical and Chemical properties of epitaxial indium nitride. The chemical properties of the indium nitride films were characterized in detail using Secondary ion mass spectrometry and X-ray photoelectron spectroscopy, and the electrical and optical properties were studied by Hall Effect and photoluminescence measurements. Secondary ion mass spectrometry and X-ray photoelectron spectroscopy results showed that carbon and hydrogen of average concentration were measured about 1020 cm-3 in InN films and O concentration in the InN film is about 1019 cm−3. Also, the C and O concentrations decrease with increasing trimethylindium flow rate. A relatively high C, H and O concentration exists near the surface of the InN film. After etching, the etched InN film exhibited a decreased carrier concentration of 3.31 × 1019 cm−3, increased electron mobility of 335 cm2/V-s. Optical properties showed that the PL spectra exhibited NBE peak in the range of 0.692 ~ 0.735 eV. Also, the peaks showed blue-shift with increasing V/III flow ratio.