| AVS 63rd International Symposium & Exhibition | |
| Electronic Materials and Photonics | Friday Sessions |
| Session EM-FrM |
| Session: | Late Breaking News on Electronic Materials and Devices |
| Presenter: | Yue Kuo, Texas A&M University |
| Authors: | Y. Kuo, Texas A&M University S. Zhang, Texas A&M University |
| Correspondent: | Click to Email |
Recently, a new type of solid state incandescent LED (SSI-LED) that emitted the broad band warm white light upon the application of a voltage was reported by our group [1-4]. This kind of device also has unique antifuse- and diode-like characteristics in the low voltage operation range [5,6]. The operation of this new device is based on the passing of current through nano-sized conductive paths after the breakdown of an amorphous high-k thin film stack deposited on top of a silicon wafer. The principle of light emission of the SSI-LED is the black body effect, which is different from the electron-hole or exciton-exciton recombination in the conventional crystalline compound semiconductor structure. A lifetime of over 12,000 hours was obtained previously [4].
In this talk, authors will present the new result on the lifetime study of the SSI-LED. Without a passivation layer, the device has been successfully operated continuously for over 20,000 hours in air. Changes of electrical and optical characteristics of the device over the whole operation period have been monitored. In order to understand the failure mechanism within a short period of time, we further carried out accelerated voltage stress tests. The change of the surface morphology with the applied voltage has been systematically investigated. Based on these results, authors review the mechanisms of the device operation and failure.
[1] Y. Kuo and C.-C. Lin, APL, 102, 031117 (2013).
[2] Y, Kuo and C.-C. Lin, ECS SSL, 2,Q59 (2013)
[3] Y. Kuo, IEEE TED, 62, 3536-3540 (2015).
[4] C.-C. Lin and Y. Kuo, JVST B, 32, 011208 (2014).
[5] Y. Kuo, ECST,67, 183 (2015).
[6] Y. Kuo, ECST,69, 23 (2015).