AVS 63rd International Symposium & Exhibition
    Electronic Materials and Photonics Wednesday Sessions
       Session EM+NS+SP+SS-WeA

Invited Paper EM+NS+SP+SS-WeA7
Revealing Optical Properties of Reduced-Dimensionality Materials at Relevant Length Scales using Nanospectroscopic Imaging

Wednesday, November 9, 2016, 4:20 pm, Room 102A

Session: Nanoscale Imaging of Metals and Compound Semiconductor based Nanostructures, Surfaces and Interfaces
Presenter: P. James Schuck, The Molecular Foundry, Berkeley Lab
Correspondent: Click to Email
Reduced-dimensionality materials for photonic and optoelectronic applications including energy conversion, solid-state lighting, sensing, and information technology are undergoing rapid development. The search for novel materials based on reduced-dimensionality is driven by new physics. Understanding and optimizing material properties requires characterization at the relevant length scale, which is often below the diffraction limit. The nano-optical imaging community has now crossed the boundary from insufficient to sufficient resolution, mapping critical optoelectronic properties in these exciting materials at their native length scales. Here, I will describe the recent near-field imaging advances that lay groundwork for generally-applicable nano-optical studies of these low-D materials, and will show recent results on 0, 1, and 2D systems. I will spend time discussing the importance of near-field polarization in probing these materials, and will also highlight recent applications in 2-D semiconductor transition metal dichalcogenides (TMDCs), where we and others have uncovered new optoelectronic regions and spatially-varying features that were hidden in prior optical studies. These findings have broad implications for the development of atomically thin transistors, quantum optical components, photodetectors and light-emitting devices.