| AVS 63rd International Symposium & Exhibition | |
| Electronic Materials and Photonics | Tuesday Sessions |
| Session EM+MN-TuM |
| Session: | New Materials and Devices for TFETs, Spintronics, and Extended CMOS |
| Presenter: | Sayeef Salahuddin, University of California, Berkeley |
| Correspondent: | Click to Email |
Phase transition materials have long been investigated for fundamental physics and also for potential application in electronics. In this presentation, I shall discuss how a controlled phase transition can lead to fundamentally new switching devices that has significantly less energy dissipation compared to the state of the art. In particular, I shall talk about the state of negative capacitance that can be achieved in certain material systems with stored energy of phase transition. Our recent experiments with ferroelectric materials have shown that such a state of negative capacitance can actually be achieved. I shall also describe our very recent results where such negative capacitance, when combined with conventional transistors, have demonstrated a reduction in supply voltage at a given ON current.