AVS 63rd International Symposium & Exhibition
    Electronic Materials and Photonics Tuesday Sessions
       Session EM+MN-TuM

Invited Paper EM+MN-TuM10
Tunneling in Low-Dimensional Materials

Tuesday, November 8, 2016, 11:00 am, Room 102A

Session: New Materials and Devices for TFETs, Spintronics, and Extended CMOS
Presenter: Joerg Appenzeller, Purdue University
Correspondent: Click to Email
Over the last years, two-dimensional (2D) materials are attracting an increasing amount of interest for various electronic applications owing in particular to the ideal electrostatics conditions that can be enabled in a three-terminal field-effect transistor (FET) geometry. Transition metal dichalcogenides (TMDs) as MoS2, WSe2, or WS2, to just name a few, or black phosphorus (BP) offer sizable bandgaps at mobilities that cannot be achieved in three-dimensional, bulk type materials that are scaled down to similar dimensions. The key is the absence of dangling bonds at the 2D semiconductor to substrate or gate dielectric interface that allows for highly conductive channels with sub-nm body thicknesses. In my presentation I will discuss the benefits of an ultra-thin body structure for scaled device applications with a particular emphasis on tunneling field-effect transistors (TFETs). I will also elucidate the critical impact of Schottky barrier (SB) contacts in the context of TMD and BP devices and will present an analytical approach that allows extracting materials and device information as the SB height and bandgap of single- and multi-layer FET structures. Moreover, I will present an analysis on the impact of strain in TMD FETs and discuss the potential relevance of strain for TMD TFETs to achieve ideal performance specs.