AVS 63rd International Symposium & Exhibition
    2D Materials Focus Topic Tuesday Sessions
       Session 2D-TuA

Paper 2D-TuA3
Studies of Conductance in Graphene Defects and Junctions using Complex-Injecting Potentials and TDDFT

Tuesday, November 8, 2016, 3:00 pm, Room 103B

Session: Novel Quantum Phenomena in 2D Materials
Presenter: Cody Covington, Vanderbilt University
Authors: C.L. Covington, Vanderbilt University
K. Varga, Vanderbilt University
Correspondent: Click to Email

In order create nanoscale electronic devices, there is a need for making high quality electrical connections between functional regions or specific defects[1]. However, connecting dissimilar materials such as graphene and metals[2] may pose complications from differing densities of states and work functions, and predicting how the system is effected computationally can be challenging given the system size. To address these challenges, studies of the electrons flow through heterogeneous material junctions, using complex potentials on a real-space grid and Time-Dependent Density Functional Theory have been performed. By confining an electron into the conduction band at a single point and propagating the system in time, the wavefunction for the system in a specific conducting state can be solved. Considerations for junctions and use of injecting and absorbing potentials in regions of diminished electron density will be presented.

[1] J. Lahiri, Y. Lin, P. Bozkurt, I.I. Oleynik, M. Batzill, An extended defect in graphene as a metallic wire, Nat Nano, 5 (2010) 326-329.

[2] F. Xia, V. Perebeinos, Y.-m. Lin, Y. Wu, P. Avouris, The origins and limits of metal-graphene junction resistance, Nat Nano, 6 (2011) 179-184.