AVS 63rd International Symposium & Exhibition
    2D Materials Focus Topic Thursday Sessions
       Session 2D-ThP

Paper 2D-ThP9
Advanced Thermoelectric Devices from Ni/Bi2Te3/Sb2Te3/Ni Thin Films for Energy Harvesting

Thursday, November 10, 2016, 6:00 pm, Room Hall D

Session: 2D Materials Poster Session
Presenter: Cody Birchfield, Alabama A&M University
Authors: S. Budak, Alabama A&M University
Z. Xiao, Alabama A&M University
M. Curley, Alabama A&M University
C. Birchfield, Alabama A&M University
J. Cole, Alabama A&M University
M. Howard, Alabama A&M University
B. Rodgers, Alabama A&M University
T. Strong, Alabama A&M University
Correspondent: Click to Email

Thermoelectric devices were prepared from Ni/Bi2Te3/Sb2Te3/Ni thin films using E-beam deposition and DC/RF magnetron sputtering systems. Fabricated devices were annealed at different temperatures to form nanostructures in the multilayer thin films to increase both the Seebeck coefficients and electrical conductivity and decrease thermal conductivity. The thermoelectric devices were characterized using Seebeck coefficient measurement system; four probe van der Pauw measurement resistivity system and the laser thermal conductivity system. The surface morphology of the fabricated thermoelectric films is characterized using Scanning Electron Microscope (SEM). TE devices will also be characterized as if they are wave-guides. Mode index, propagation loss, refractive index profile with respect to the dose, depth of the thin films will be analyzed as a function of annealing temperatures.

Acknowledgement

Research was sponsored by NSF with grant numbers NSF-HBCU-RISE-1546965, NSF-EPSCOR-R-II-3-EPS-1158862, DOD with grant numbers W911 NF-08-1-0425, and W911NF-12-1-0063, U.S. Department of Energy National Nuclear Security Administration (DOE-NNSA) with grant numbers DE-NA0001896 and DE-NA0002687.