| AVS 63rd International Symposium & Exhibition | |
| 2D Materials Focus Topic | Wednesday Sessions |
| Session 2D+TF-WeM |
| Session: | 2D Materials: Growth and Fabrication |
| Presenter: | Pedro Arias, University of California at Los Angeles |
| Authors: | P. Arias, University of California at Los Angeles A. Ebnonnasir, University of California at Los Angeles F. Fankhauser, University of California at Los Angeles C. Ciobanu, Colorado School of Mines S. Kodambaka, University of California Los Angeles |
| Correspondent: | Click to Email |
Using in-situ ultra-high vacuum variable-temperature scanning tunneling microscopy (STM), we investigate the chemical vapor deposition kinetics of hexagonal boron nitride (hBN) monolayer growth on Pd(111) substrates as a function of substrate temperature, borazine flux, and deposition time. All of the experiments were carried out on sputter-deposited Pd(111)/Al2O3(0001) thin films. In each experiment, STM images were acquired while resistively heating the Pd(111) samples on the STM stage at temperatures between 300 K and 773 K and in the presence of borazine (10-7 ~ 10-6 Torr) for times between 60 s and 2500 s. We observe the nucleation and growth of chemisorbed (and presumably partially dissociated) borazine islands on the Pd surfaces. From the STM images, we measured the island density and size as a function of time, temperature, and borazine flux. We find that both the island density and size increase with increasing borazine flux and deposition time. We also find that borazine islands form on Pd(111) ‘up-steps.’ After achieving monolayer coverage of borazine, the samples are annealed in ultra-high vacuum at 1020 K for 60 seconds to form hBN monolayers. We then determined of the number density of rotational domains in the hBN layers, based upon which we identify the deposition parameters critical to the growth of single-domain hBN layers on Pd(111).