| AVS 63rd International Symposium & Exhibition | |
| 2D Materials Focus Topic | Wednesday Sessions |
| Session 2D+TF-WeM |
| Session: | 2D Materials: Growth and Fabrication |
| Presenter: | Li Gao, California State University Northridge |
| Authors: | X. Fei, California State University Northridge J. Neilson, California State University Northridge V. Lopez, California State University Northridge H.J. Gao, Chinese Academy of Sciences, People's Republic of China L. Gan, Peking University, People's Republic of China L. Gao, California State University Northridge |
| Correspondent: | Click to Email |
Heteroatom-doped graphene materials have potential applications in electronic devices, energy storage and conversion systems, and gas storage. Chemical doping with various heteroatoms is an effective strategy for tuning the properties of graphene in order to expand its applications. Toward the practical applications as well as fundamental studies of doped graphene materials, it is an urgent task to explore effective approaches to synthesize these materials with a high level of control over their doping properties. In this talk, we will discuss the synthesis of heteroatom-doped graphene materials from fullerene precursors. Initial success has been achieved on the iridium and ruthenium surfaces. The growth process and the properties of grown doped graphene materials are characterized by using scanning tunneling microscopy on the atomic scale. We will discuss how the growth process and the properties of grown doped graphene depend on precursor/metal systems and experimental conditions. This new synthesis approach is an important complement to the existing strategies for the preparation of heteroatom-doped graphene.