AVS 63rd International Symposium & Exhibition
    2D Materials Focus Topic Friday Sessions
       Session 2D+NS-FrM

Paper 2D+NS-FrM12
Visualizing Light Scattering in Silicon Waveguides with few-layer Black Phosphorous Photodetectors

Friday, November 11, 2016, 12:00 pm, Room 103B

Session: 2D Materials: Device Physics and Applications
Presenter: Tianjiao Wang, Vanderbilt University
Authors: T. Wang, Vanderbilt University
S. Hu, Vanderbilt University
B. Chamlagain, Wayne State University
Z. Zhou, Wayne State University
S.M. Weiss, Vanderbilt University
Y. Xu, Vanderbilt University
Correspondent: Click to Email

We investigate the light scattering properties of a silicon nanobeam waveguide through wavelength- and polarization-dependent scanning photocurrent measurements of a black phosphorus (BP) photodetector on top of the silicon waveguide. The measured photocurrent responses exhibit similar patterns as the light intensity distribution calculated by finite-difference time-domain simulations, suggesting that the light scattering properties of the waveguide can be detected as photocurrent signals by the BP photodetector. Interestingly, no photocurrent signals are observed when the incident photon energy is below the bandgap of silicon, indicating that the photocurrent response generated in the BP photodetector is mainly attributed to the photo-excited electron-hole pairs in the silicon waveguide which can be injected into the BP and dominate its photocurrent generation. Our experimental results suggest that two dimensional (2D) material based photodetectors can offer an effective approach to visualize the light scattering properties of photonic structures by photocurrent mapping, which not only opens up avenues for learning about light matter interaction of photonic structures but also provides a way of engineering future 2D material based optoelectronic devices with integrated photonic structures.