AVS 63rd International Symposium & Exhibition
    2D Materials Focus Topic Monday Sessions
       Session 2D+MI-MoA

Paper 2D+MI-MoA9
Electronic Structure of Metallic Twin Grain Boundaries in Monolayer MoSe2

Monday, November 7, 2016, 4:20 pm, Room 103B

Session: Dopants, Defects and Interfaces in 2D Materials
Presenter: Matthias Batzill, University of South Florida
Correspondent: Click to Email

Monolayers of MoSe2 grown by molecular beam epitaxy on van der Waals substrates (HOPG or MoS2), may exhibit twin grain boundaries. These Se-deficient line defects have been predicted by DFT to be metallic with dispersing bands. We examine their structural and electronic properties by scanning tunneling microscopy (STM) and angle resolved photoemission spectroscopy (ARPES). A dispersing parabolic band is observed that intersects the Fermi-level indicating the metallic property of this defect. Below 235 K the line defect undergoes a Peierls, or charge density wave (CDW), transition. STM indicates a periodicity of 3 lattice constants of the CDW consistent with the Fermi-wavevector determined in ARPES. In addition, we determine that the defect behaves like an ideal one-dimensional metal. More specifically we show evidence of Tomonaga Luttinger liquid suppression of the density of states at the Fermi-level and the splitting of the band in a ‘spinon’ and ‘holon’ band, also known as spin-charge separation.