| AVS 63rd International Symposium & Exhibition | |
| 2D Materials Focus Topic | Monday Sessions |
| Session 2D+MI-MoA |
| Session: | Dopants, Defects and Interfaces in 2D Materials |
| Presenter: | Anna Hoffman, The University of Tennessee Knoxville |
| Authors: | A. Hoffman, The University of Tennessee Knoxville P.R. Pudasaini, The University of Tennessee Knoxville M.G. Stanford, The University of Tennessee Knoxville P.D. Rack, The University of Tennessee Knoxville D.G. Mandrus, The University of Tennessee Knoxville N. Cross, The University of Tennessee Knoxville J.H. Noh, The University of Tennessee Knoxville M. Koehler, The University of Tennessee Knoxville G. Duscher, The University of Tennessee Knoxville A. Belianinov, Oak Ridge National Laboratory A.J. Rondinone, Oak Ridge National Laboratory I. Ivanov, Oak Ridge National Lab T.Z. Ward, Oak Ridge National Lab |
| Correspondent: | Click to Email |
Transition metal dichalcogenides (TMD) possess interesting properties that render them attractive for opto-electronic applications. Tuning optical and electrical properties of mono and few layer TMDs, such as tungsten diselenide (WSe2), by inducing defects is an intriguing opportunity to fabricate the next generation opto-electronic devices. Here we report the effects of helium ion beam irradiation on optical and electrical properties of few layer WSe2. By controlling the ion dose irradiation, we can tune the concentration of point defects present on few layer WSe2, thereby locally tuning the electrical resistivity of the material. Semiconductor-insulator-metal like transitions have been observed with exposure to increasing helium ion beam dose, resulting in more than a seven order change in electrical resistivity. Furthermore, by selectively exposing the ion beams at the metal-WSe2 contact area, we demonstrate reduced contact resistance of the described device, thereby reducing the Schottky barrier height. This could be particularly interesting for single layer TMD devices as the Schottky contacts, formed at metal/semiconductor interfaces, have a huge influence on the TMD device’s performance.