| AVS 62nd International Symposium & Exhibition | |
| Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:20pm | PS2-TuA1 Invited Paper Realistic Plasma Etch Simulation for High Aspect Ratio Contact Hole using Graphics Processing Units Yeon Ho Im, Chonbuk National University, Republic of Korea |
| 3:00pm | PS2-TuA3 Validation of Inductively Coupled Plasmas Sustained in Halogen Chemistries Ankur Agarwal, Applied Materials Inc., M. Foucher, LPP-CNRS, Ecole Polytechnique, France, S. Rauf, Applied Materials Inc., J.-P. Booth, P. Chabert, LPP-CNRS, Ecole Polytechnique, France, K.S. Collins, Applied Materials Inc. |
| 3:20pm | PS2-TuA4 Enhanced SiN Etching by Hydrogen Radicals during Fluorocarbon/Hydrogen Plasma Etching; Molecular Dynamics Simulation Analyses Yuichi Murakami, M. Isobe, K. Miyake, Osaka University, Japan, M. Fukasawa, K. Nagahata, Sony Corporation, T. Tatsumi, Sony Corporation, Japan, S. Hamaguchi, Osaka University, Japan |
| 4:20pm | PS2-TuA7 Invited Paper Plasma-induced Surface Roughening and Ripple Formation during Plasma Etching of Silicon Kouichi Ono, Kyoto University, Japan |
| 5:00pm | PS2-TuA9 Invited Paper Feature Scale Modeling of Semiconductor Processes Phillip Stout, Applied Materials |
| 5:40pm | PS2-TuA11 Pattern Loading in Etch through Profile Simulation Yiting Zhang, S. Sriraman, J. Belen, A. Paterson, Lam Research Corporation, M.J. Kushner, University of Michigan, Ann Arbor |
| 6:00pm | PS2-TuA12 Plasma Modeling of a Magnetized Inductively-Coupled Plasma Reactor Jason Kenney, S. Rauf, K.S. Collins, Applied Materials, Inc. |