| AVS 62nd International Symposium & Exhibition | |
| Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:20pm | PS1-TuA1 Invited Paper Low-Damage Etching Technology for Nitride Semiconductor Devices Makoto Sekine, Z. Liu, J. Pan, K. Ishikawa, K. Takeda, H. Kondo, M. Hori, Nagoya University, Japan |
| 3:00pm | PS1-TuA3 Limitation of Surface Defects in GaN Deep Etching N. Gosset, Thomas Tillocher, GREMI CNRS/Université d'Orléans, France, J. Ladroue, ST Microelectronics, France, P. Lefaucheux, GREMI CNRS/Université d'Orléans, France, M. Boufnichel, ST Microelectronics, France, R. Dussart, GREMI CNRS/Université d'Orléans, France |
| 3:20pm | PS1-TuA4 In Situ Monitoring of GaN in Process Plasma Daisuke Ogawa, Y. Nakano, K. Nakamura, Chubu University, Japan |
| 4:20pm | PS1-TuA7 Thermodynamic-aided Selection of Non-PFC Plasma Chemistries Nicholas Altieri, J.K.C. Chen, L. Minardi, J.P. Chang, University of California Los Angeles |
| 4:40pm | PS1-TuA8 Enhancing Selectivity for Self-Aligned Contact Etching by Employing Dual Fluorocarbon Etch Gas Processes Jeffrey Shearer, IBM Research Division, S.U. Engelmann, R.L. Bruce, E.M. Sikorski, IBM Research Division, T.J. Watson Research Center, T. Suzuki, M. Nakamura, A. Ito, ZEON Chemicals L.P., G. Matsuura, H. Matsumoto, Zeon Corporation, Japan, B. Messer, K. Horvath, A. Metz, TEL Technology Center, America, LLC, J.C. Arnold, IBM Research Division, E.A. Joseph, IBM Research Division, T.J. Watson Research Center |
| 5:00pm | PS1-TuA9 Pushing the Limits of Dielectric Etch with Novel Fluorocarbon Etch Gases Robert Bruce, IBM Research Division, T.J. Watson Research Center, T. Suzuki, ZEON Chemicals L.P., J. Lee, IBM Albany Nanotech Center, E.A. Joseph, S.U. Engelmann, IBM Research Division, T.J. Watson Research Center, A. Itou, M. Nakamura, ZEON Chemicals L.P., G. Matsuura, Zeon Corporation, Kawasaki, Japan, J.C. Arnold, IBM Albany Nanotech Center, E.M. Sikorski, IBM Research Division, T.J. Watson Research Center |
| 5:20pm | PS1-TuA10 First-Principles Theoretical Investigation on Mechanism of New Transition Metal Etching Process using Oxygen and argon Neutral Beams and Ethanol Gas Tomohiro Kubota, Y. Kikuchi, S. Samukawa, Tohoku University, Japan |
| 5:40pm | PS1-TuA11 Generalized Approach for Selecting Viable Plasma Chemistries in Patterning Magnetic Metals Jack Kun-Chieh Chen, T. Kim, N.D. Altieri, J.P. Chang, University of California Los Angeles |
| 6:00pm | PS1-TuA12 Short- and Damage-Free Process for Patterning Magnetic Tunnel Junctions for High-Density Application Dunja Radisic, L. Souriau, IMEC, Belgium, V. Paraschiv, SC Etch Technology Solutions, D. Goossens, IMEC, Belgium, F. Yamashita, N. Koizumi, S. Tahara, E. Nishimura, Tokyo Electron Miyagi Limited, Japan, W. Kim, G. Donadio, D. Crotti, J. Swerts, S. Mertens, T. Lin, S. Couet, D. Piumi, GS. Kar, A. Furnemont, IMEC, Belgium |