| AVS 62nd International Symposium & Exhibition | |
| Plasma Science and Technology | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | PS+SS+TF-WeM1 Invited Paper Atomic Layer Etching to Escape Process Tradeoffs for 7nm Technology and Beyond Alok Ranjan, M. Wang, S. Sherpa, TEL Technology Center, America, LLC, P. Ventzek, Tokyo Electron America, Inc. |
| 8:40am | PS+SS+TF-WeM3 Understanding of new processes for Atomic Layer Etching Florentin Chambettaz, L. Vallier, J. Dubois, Univ. Grenoble Alpes-CNRS-CEA/Minatec-LTM,38000 Grenoble-France, O. Joubert, Univ. Grenoble Alpes-CNRS-CEA, France |
| 9:00am | PS+SS+TF-WeM4 Self-Limited Ion Implantation for Precise Low-k Spacer Etching Nicolas Posseme, Cea-Leti, Minatec, France, M. Garcia-Barros, C. Arvet, ST Microelectronics, O. Pollet, Cea-Leti, Minatec, S. Lagrasta, P. Maury, ST Microelectronics, F. Leverd, ST Microlectronics, C. Richard, ST Microelectronics, S. Barnola, Cea-Leti, Minatec, France |
| 9:20am | PS+SS+TF-WeM5 Self-limiting Cyclic Etching of Silicon Nitride using Infrared Irradiation Nobuya Miyoshi, Hitachi, Japan, H. Kobayashi, K. Shinoda, Hitachi, M. Matsui, Hitachi, Japan, M. Miyake, K. Maeda, Hitachi, Y. Kouzuma, Hitachi High-Technologies, Japan, Y. Kudo, T. Kanekiyo, M. Izawa, Hitachi High-Technologies |
| 9:40am | PS+SS+TF-WeM6 Prospects for Thermal Atomic Layer Etching: Materials and Selectivity Steven George, Y. Lee, J.W. DuMont, University of Colorado at Boulder |
| 11:00am | PS+SS+TF-WeM10 Atomic Layer Etching of Al2O3 Using Sequential, Self-Limiting Thermal Reactions with Trimethylaluminum and Hydrogen Fluoride Younghee Lee, J.W. DuMont, S.M. George, University of Colorado, Boulder |
| 11:20am | PS+SS+TF-WeM11 Low Damage Etch Chamber for Atomic Layer Etching Leonid Dorf, S.R. Dorf, T.G. Monroy, K. Ramaswamy, K.S. Collins, Y. Zhang, Applied Materials |
| 11:40am | PS+SS+TF-WeM12 Modeling of Electron-Beam Generated Plasmas: Validation and System Design Shahid Rauf, A. Agarwal, L. Dorf, K.S. Collins, Applied Materials, Inc., D.R. Boris, S.G. Walton, US Naval Research Laboratory |
| 12:00pm | PS+SS+TF-WeM13 Enhanced Reaction Rate and Precursor Transport in Focused Electron Beam Induced Etching Via Pulsed Laser Assistance JooHyon Noh, University of Tennessee, J.D. Fowlkes, Oak Ridge National Laboratory, R. Timilsina, M.G. Stanford, B.B. Lewis, P.D. Rack, University of Tennessee |