AVS 62nd International Symposium & Exhibition
    Thin Film Thursday Sessions
       Session TF-ThP

Paper TF-ThP22
Low-Temperature Atomic Layer Deposition of Platinum Using (Methylcyclopentadienyl)trimethylplatinum and Ozone

Thursday, October 22, 2015, 6:00 pm, Room Hall 3

Session: Thin Films Poster Session
Presenter: Huazhi Li, Arradiance
Authors: H. Li, Arradiance
N. Sullivan, Arradiance
P. Chinoy, Arradiance
Correspondent: Click to Email
Because of the excellent electric and catalytic properties of Pt, ALD of Pt has attracted considerable attention for applications in nanoelectronics, electrochemistry, catalysis, and sensing. The most commonly applied ALD process for Pt uses (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) and O2 as precursors. It was found that the optimum process window of this process is 250 - 300 °C1. Below 250 °C, very low growth rates and poor Pt nucleation on some substrates such as Si or SiO2, are observed. These limitations rule out applications on heat sensitive polymer substrates.

To address the need for low temperature ALD Pt, processes based on ozone2 and oxygen plasma with a subsequent reduction by H23 have been reported. O3 is being used in a growing number of atomic layer deposition (ALD) processes because O3 is a powerful oxidizer and is easier to purge than H2O, particularly at lower growth temperatures (≤ 100 °C). The development low temperature ALD processes using O3 process4 and low temperature plasma processes will be reported. In this work, growth kinetics, crystalline structure, resistivity, and purity of Pt thin films grown using O3 as reactant gas in combination with the MeCpPtMe3 precursor are studied. Additionally, the conformality of the MeCpPtMe3/O3 process and its nucleation behavior on a SiO2 surface will be discussed. The results reported describe a process that is highly suited for Pt deposition on thermally fragile substrates.

Literature:

1. T. Aaltone, M. Ritala, T. Sajavaara, J. Keinonen, M. Leskela; “Atomic Layer Deposition of Platinum Thin Films”; Chem. Mater. 2003, 15, 1924−1928.

2. J. Hamalainen, F. Munnik, M. Ritala, M. Leskela; “Atomic

Layer Deposition of Platinum Oxide and Metallic Platinum Thin Films from Pt(acac)2 and Ozone”; Chem. Mater. 2008, 20, 6840−6846.

3. H. C. M. Knoops, A. J. M. Mackus, M. E. Donders, M. C. M. van de

Sanden, P. H. L. Notten, W. M. M. Kessels; “Remote Plasma ALD of Platinum and Platinum Oxide Films” Electrochem. Solid-State Lett. 2009, 12, G34−G36

4. H. Li, J. Narayanamoorthy, N. Sullivan, D. Gorelikov; “Low Temperature (LT) Thermal ALD Silicon Dioxide Using Ozone Process”; ALD 2014, Kyoto, Japan.