| AVS 62nd International Symposium & Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF+AS+NS+SA-ThM |
| Session: | Thin Film: Growth and Characterization, Optical and Synchrotron Characterization I |
| Presenter: | Avyaya Narasimham, University at Albany-SUNY |
| Authors: | A.J. Narasimham, University at Albany-SUNY R.J. Matyi, State University of New York A. Green, University at Albany-SUNY A.C. Diebold, State University of New York V. LaBella, State University of New York |
| Correspondent: | Click to Email |
Spin-orbit coupling in metastable β-W generates spin transfer torques strong enough to flip magnetic moment of an adjacent magnetic layer. In a MTJ stack these torques can be used to switch between high and low resistive states. This technique can be used in designing efficient magnetic memory and non-volatile spin logic devices. Deposition conditions selective to β- W need to be understood for the large scale fabrication of such devices. The transition from β to α phase of Tungsten is strongly governed by thickness of W layer, base pressure and oxygen availability for example, above 5 nm β film relaxes and forms an α phase. Resistivity measurements as well as x-ray photoelectron spectroscopy and x-ray diffraction and reflectivity analysis are performed to determine the phase and thickness of tungsten films. We show that β phase is influenced by ultrathin thermal oxide of Si layer and the amount of oxygen flow during the growth. These results demonstrate a reliable technique to fabricate β W films up to 20 nm on bare Si and silicon dioxide, while providing insight to growing it anywhere in the device stack.