AVS 62nd International Symposium & Exhibition
    Surface Science Wednesday Sessions
       Session SS+AS+NS-WeM

Paper SS+AS+NS-WeM12
Characterization of Band Gap and Lattice Constant of Ultrathin ZnO Layers on Au(111)

Wednesday, October 21, 2015, 11:40 am, Room 113

Session: Metals, Alloys & Oxides: Reactivity and Catalysis
Presenter: Junseok Lee, National Energy Technology Laboratory
Authors: J. Lee, National Energy Technology Laboratory
D. Sorescu, National Energy Technology Laboratory
X. Deng, National Energy Technology Laboratory
Correspondent: Click to Email

Ultrathin layers of ZnO grown on the Au(111) substrate have been characterized using low-temperature scanning tunneling microscopy (STM). Under reactive deposition condition, the ZnO layers have been found to grow by forming islands. Detailed analysis of electronic structure have been conducted using scanning tunneling spectroscopy (STS) and the density functional theory (DFT) calculations. The band gap of ultrathin layers of ZnO is found to be larger compared to the bulk ZnO wurtzite structure. The density functional theory calculations provides understanding of the increased band gaps of thin ZnO layers. The lattice constants of ultrathin ZnO layers on Au(111) are also found to be larger than that of the bulk lattice constant, which could be explained by the formation of graphitic-like ZnO layers.