AVS 62nd International Symposium & Exhibition
    Plasma Science and Technology Thursday Sessions
       Session PS+2D-ThM

Paper PS+2D-ThM3
Sensing Cleanliness of PMMA Transferred CVD Grown Graphene

Thursday, October 22, 2015, 8:40 am, Room 210A

Session: Plasma Processing for 2D Materials
Presenter: Christian Teichert, Montanuniversität Leoben, Austria
Authors: C.K. Teichert, Montanuniversität Leoben, Austria
M.C. Kratzer, Montanuniversität Leoben, Austria
B.C. Bayer, University of Cambridge, UK
Correspondent: Click to Email

Crystalline films of small organic semiconductors offer attractive potential for optoelectronic applications on flexible substrates. However, these applications require a transparent and flexible electrode material; and here the novel material graphene (Gr) comes into play. Since small conjugated molecules like the rod-like oligophenylene molecule para-hexaphenyl (6P) fits well to the hexagonal structure of graphene, growth of 6P on Gr can be expected in a lying configuration.

As demonstrated by in situ by low-energy electron microscopy, 6P grows at 240 K indeed in a layer-by-layer mode with lying molecular orientation on Ir(111) supported graphene [1]. Islands nucleate at Gr wrinkles [2]. At higher temperatures, needle-like 6P crystallites - also composed of lying molecules are observed [3]. Also on exfoliated, wrinkle-free graphene, such needles develop with discrete orientations defined by the Gr lattice as was detected by atomic-force microscopy (AFM) [4,5]. Needles are never observed on contaminations or on the silicon oxide substrate. There, exclusively islands composed of upright standing molecules are observed. Since these islands are easily detected by AFM, growth of 6P can be used to sense the cleanliness of a variety of graphene substrates as we have demonstrated for PMMA transferred CVD grown graphene. On the as grown samples, PMMA remainders hinder the growth of extended needles. For increasing anneling temperature, the 6P needles grow in length because the PMMA residues decrease substantially [6].

[1] G. Hlawacek, et al., Nano Lett. 11 (2011) 333. [2] G. Hlawacek, et al., IBM J. Res. Devel. 55 (2011) 15. [3] F. Khokar, et al., Surf. Sci. 606 (2012) 475. [4] M. Kratzer, et al., JVSTB 31 (2013) 04D114. [5] M. Kratzer, et al., e-J. Surf. Sci. Nanotechn. 12 (2014) 015303. [6] M. Kratzer, et al., Appl. Phys. Lett. 106 (2015) 103101.