| AVS 62nd International Symposium & Exhibition | |
| Nanometer-scale Science and Technology | Tuesday Sessions |
| Session NS-TuP |
| Session: | Nanometer-scale Science and Technology Poster Session |
| Presenter: | Arturo Hernández-Hernández, Universidad Autónoma del Estado de Hidalgo, México |
| Authors: | A. Hernández-Hernández, Universidad Autónoma del Estado de Hidalgo, México L.A. Hernández-Hernández, Escuela Superior de Física y Matemáticas del Instituto Politécnico Nacional, Mexico F. De Moure-Flores, Universidad Autónoma de Querétaro, México J.G. Quiñones-Galván, Universidad de Guadalajara, Mexico B. Marel Monroy, Universidad Nacional Autónoma de México G. Santana-Rodríguez, Universidad Nacional Autónoma de México M. Melendez-Lira, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Mexico |
| Correspondent: | Click to Email |
In this work we report a two-terminal metal-oxide-semiconductor photodetector for which light is absorbed in a capping layer of germanium nanocrystals embedded in a silicon oxide matrix grown on p -type silicon substrates. Operated at direct and reverse bias photoresponse from 900 to 1300 nm was observed. Also, we report on the effect of nanocrystal size on the photocurrent. The highest optoelectronic conversion efficiency was observed in samples with smaller germanium nanocrystals. This effect were explained by a transistorlike mechanism, in which the inversion layer acts as the emitter and trapped positive charges in the dielectric layer assist carrier injection from the inversion layer to the contact, such that the primary photocurrent could be amplified.