AVS 62nd International Symposium & Exhibition
    Nanometer-scale Science and Technology Tuesday Sessions
       Session NS-TuP

Paper NS-TuP5
A Simple Fabrication of Nano-Pillar Structures by Contact Block Copolymer Technique

Tuesday, October 20, 2015, 6:30 pm, Room Hall 3

Session: Nanometer-scale Science and Technology Poster Session
Presenter: Hwasung Kim, Samsung Electronics, Republic of Korea
Authors: H.S. Kim, Samsung Electronics, Republic of Korea
J.W. Park, Sungkyunkwan University, Republic of Korea
D.H. Yun, Sungkyunkwan University, Republic of Korea
G.Y. Yeom, Sungkyunkwan University, Republic of Korea
Correspondent: Click to Email
Recently, the formation methods of nano-structured materials are intensively investigated for next-generation devices such as chemical sensor, optical sensor, field effect transistor, and solar cell. The diameter, spacing, and shape of the nano-structured materials are very important in the devices because they control the device performance such as the electrical and optical properties. In this study, the silicon nano-pillar structures were fabricated by a contact block copolymer (BCP) technique which is a potential technique for the fabrication of self-aligned nanoscale structures. For the contact BCP technique, a nanometer scale BCP pattern such as hole and line pattern was formed on the silicon surface and the BCP masked silicon was exposed to nitrogen ion beam for the surface nitriding. Using the nitride surface, after the removal of the BCP mask, the silicon nano-pillar structures could be successfully fabricated using chlorine-based ion beam. This technique provided a method of forming a silicon nanostructure using simplified process steps by removing additional step of the mask deposition and etching. Especially, due to the extremely low thickness of the nitride mask layer, precise transfer of the mask dimension to silicon was possible. The use of low-energy ion beam could minimize the damages on the nano-pillar silicon surface in addition to the increase of etch selectivity.