AVS 62nd International Symposium & Exhibition
    Nanometer-scale Science and Technology Tuesday Sessions
       Session NS-TuP

Paper NS-TuP15
Preparation, Characterization, and Optical properties of Al Doped Vanadium Pentoxide Nanowires

Tuesday, October 20, 2015, 6:30 pm, Room Hall 3

Session: Nanometer-scale Science and Technology Poster Session
Presenter: Chen-Chuan Chang, National Tsing Hua University, Taiwan, Republic of China
Authors: C.C. Chang, National Tsing Hua University, Taiwan, Republic of China
M.W. Huang, Chinese Culture University, Taiwan, Republic of China
H.C. Hsih, National Chung Hsing University, Taiwan, Republic of China
Correspondent: Click to Email

Al doped Vanadium pentoxide nanowires were synthesized via a rheological phase reaction on Si (100) substrate by self-assembled process using solid precursors of vandium powders (V2O2 99.5%) in an Ar atmosphere (5x10-2 Torr, 10 sccm) at 800 oC in a horizontal quartz tube furnace. The nanowires with high yields were obtained in the whole substrate, have a length of several micrometers and diameter of 50 and 100 nm. XRD and TEM analysis show an orthorhombic crystal structure growing along direction [020] with sharp diffraction peaks at (010) and (020). XPS patterns showed three conspicuous binding energy peaks of nanorods is characteristics of vanadium in the +5 oxidation state which is well consistent with the value of V2O5 structure. Micro-Raman spectroscopy was also used to investigate the vibrational modes of the nanowires. Thermal CVD process can be expected to serve as a practical and general method to synthesize metal oxide nanowires in a large scale.