AVS 62nd International Symposium & Exhibition
    Nanometer-scale Science and Technology Monday Sessions
       Session NS-MoM

Invited Paper NS-MoM10
NSTD Nanotechnology Recognition Award Talk: Nanomaterials in Sensor and Electronics Development

Monday, October 19, 2015, 11:20 am, Room 212B

Session: Nanotools and Nanodevices
Presenter: Meyya Meyyappan, NASA Ames Research Center
Correspondent: Click to Email

Nanomaterials such as carbon nanotubes (CNTs), graphene and silicon nanowires (SiNWs) have received much attention for sensors and nanoelectronics due to their interesting properties. This talk will provide an overview of recent development in these fields at NASA Ames Center for Nanotechnology. We have developed CNT based chemical sensors for space exploration needs such as crew cabin air quality monitoring and fuel leak detection; the chemiresistor based sensor array is operated as an electronic nose and demonstrated for the detection of various gases and vapors at ppm-ppb levels. Routine astronaut health monitoring and water quality monitoring in the International Space Station and future crew vehicles require compact, low power lab-on-a-chip that can provide rapid analysis. Our nanoelectrodes array based biosensor uses PECVD-grown vertically aligned carbon nanofibers and provides electrochemical response from CV and/or impedance spectroscopy upon probe-target interaction. Sample results for the sensitive detection of three biomarkers for heart disease and the potential for multiplexing will be presented. We have also taken a “More-than-Moore” philosophy in the construction of radiation sensors where a conventional silicon FINFET-like structure uses a radiation-responsive gel dielectric in the nanogap created from the removal of SiO2 dielectric. Both n- and p- type devices show excellent response to gamma radiation, demonstrating the potential to construct a radiation nose. Finally, we have been developing nanoscale vacuum tubes using entirely silicon technology for future radiation-immune electronics. Devices with a 50 nm source-drain gap provide an excellent drive current, on/off ratio of 106 and drive voltage of < 5 V. The author acknowledges contributions from Jessica Koehne, Ramprasad Gandhiraman, Adaikappan Periyakaruppan, Jin-woo Han, Ami Hannon, Beomsok Kim, Yijiang Lu, Taiuk Rim, Chang-Ki Baek and Jeong-Soo Lee.