AVS 62nd International Symposium & Exhibition
    MEMS and NEMS Thursday Sessions
       Session MN-ThM

Invited Paper MN-ThM3
Novel Graphene Devices Based on Laser-Scribing Technology

Thursday, October 22, 2015, 8:40 am, Room 210B

Session: Atomic Layer Nanostructures and 2D NEMS
Presenter: Qian-Yi Xie, Tsinghua University, China
Authors: H. Tian, Tsinghua University, China
Q.-Y. Xie, Tsinghua University, China
N.-Q. Deng, Tsinghua University, China
L.-Q. Tao, Tsinghua University, China
X.-F. Wang, Tsinghua University, China
W.-T. Mi, Tsinghua University, China
Y.-X. Li, Tsinghua University, China
H.-M. Zhao, Tsinghua University, China
Y.-T. Li, Tsinghua University, China
Y. Shu, Tsinghua University, China
Y. Yang, Tsinghua University, China
T.-L. Ren, Tsinghua University, China
Correspondent: Click to Email
Wafer-scale graphene devices could be fabricated by one-step laser-scribing technology. Six kinds of novel graphene devices have been developed, including in-plane transistor, resistive memory, photo detector, earphone, strain sensor and pressure sensor. The in-plane graphene transistor has a large on/off ratio up to 5.34 with simpl e structure. The graphene resistive memory has a Fin-like structure with forming-free, stable switching, reasonable reliability and potential for 2-bit storage. The 1D and 2D arrays of graphene photo detectors were achieved with photo responsivity as high as 0.32 A/W. The graphene earphone realizes wide-band sound generation from 100 Hz to 50 kHz, which can be used for both human and animals. The strain sensor based on graphene micro ribbon has the gauge factor up to 9.49. The sensitivity of the graphene pressure sensor is as high as 0.96 kPa-1 in a wide pressure range (0~50 kPa). These results demonstrated that the laser-scribed technology could be used as a platform to develop novel graphene devices.

Keywords: Graphene Devices; Laser-Scribing; Wafer-scale; Transistors; Memory; Sensors and Actuators

Acknowledgments: This work was supported by National Natural Science Foundation (61434001), 973 Program (2015CB352100), National Key Project of Science and Technology (2011ZX02403-002) and Special Research Fund of Agricultural Science and Technology for Public Interest (201303107) of China.