AVS 62nd International Symposium & Exhibition
    IPF on Mesoscale Science and Technology of Materials and Metamaterials Tuesday Sessions
       Session IPF+MS-TuM

Invited Paper IPF+MS-TuM3
Why Structural Failure is Mesoscale: From Dislocations to Fatigue Cracks

Tuesday, October 20, 2015, 8:40 am, Room 210F

Session: Degradation Science (8:00-10:00) & Electrochemistry from Nano to Meso Scale (11:00-12:20)
Presenter: Anthony Rollett, Carnegie Mellon University
Correspondent: Click to Email

Structural failure of materials is a mesoscale problem because, for example, we lack the tools to predict when and where fatigue cracks will appear in relation to materials microstructure. Dislocations are well understood as line defects but we do not how to compute the behavior of large numbers of dislocations in relation to microstructure. Enormous strides have been made in quantifying the growth of fatigue cracks over the years and improving predictions of component lifetime but all at the microstructural scale and above. Nevertheless, it is clear that the behavior of short cracks is less well quantified, where short is relative to the length scale(s) found in materials microstructure, e.g. grain size. Short fatigue cracks in nickel-based superalloys have been characterized using conventional SEM and orientation mapping. High Energy Diffraction Microscopy (HEDM) and computed tomography (CT) was used to map out the crack positions in 3D. The main finding is that cracks develop most readily along long twin boundaries with high resolved shear stress on the slip systems parallel to the twin plane. Also, both halves of a different superalloy, fully fractured sample have been fully characterized in 3D using the same tools. The HEDM and CT were performed with high energy x-rays on beamline 1ID at the Advanced Photon Source (APS). This talk will review current dislocation modeling, empirical understanding of fatigue cracks in engineering materials and what the experimental and theoretical roadmap might be to address the problem set.