AVS 62nd International Symposium & Exhibition
    Energy Frontiers Focus Topic Tuesday Sessions
       Session EN-TuP

Paper EN-TuP5
Development of Low Cost, Solution Deposition Method for High Efficiency Cu2ZnSn SxSe4–X(CZTSSe) Thin Film Solar Cells

Tuesday, October 20, 2015, 6:30 pm, Room Hall 3

Session: Energy Frontiers Poster Session
Presenter: Cheik Sana, University of Texas at El Paso
Authors: C.O. Sana, University of Texas at El Paso
S. Shahriar, University of Texas at El Paso
J. Galindo, University of Texas at El Paso
D. Kava, University of Texas at El Paso
D.R. Hodges, University of Texas at El Paso
Correspondent: Click to Email
Non-vacuum, solution based processing of earth abundant Cu2ZnSnSxSe4–x (CZTSSe) has attracted considerable interest as a material capable of driving economical and terawatt capacity photovoltaic module production. It has already shown promising results with solar cells efficiency up to 12.6%. The interest to CZTSSe as an absorber layer for thin film solar cells is due to its large absorption coefficient of over 104 cm-1 in the visible range, its tunable optical band on-vacuum solution based method to deposit Cu2ZnSnSxSe4–x (CZTSSe) was investigated. In this approach, a precursor solution of CZTSSe is formed by reacting metal sources copper (II) acetate monohydrate, zinc (II) acetate dehydrate, tin (II) chloride dehydrate and elemental powders of sulfur and selenium powders in a solution of 2-metoxyethanol. The slurry was then spincoated followed by annealing at different temperatures. Optical, structural and electronic characterization of thin films were performed using scanning electron microscope (SEM), X-ray diffractometer (XRD), raman spectrometer, UV-Vis spectrophotometer, 4 point probe and Hall Effect Measurement System. Film thickness was measured using Dektak 150 surface profilometer. X-Ray diffragtograms show different shifts of the kesterite/stannite (112) peak, which indicates the presence of CZTSSe. The three major peaks of the (1112, (220), and (312) planes had respective 2θ in the vicinity of 28°, 47.5° and 56°. The shift of the peaks depends on the ratios of S/Se in the synthetized material. The lattice constants decrease linearly with increasing contents of S in the precursor solution. Raman spectroscopy showed traces of both quaternary CZTS and CZTSe.