AVS 62nd International Symposium & Exhibition
    Electronic Materials and Processing Tuesday Sessions
       Session EM-TuP

Paper EM-TuP9
Comparison of Hafnium Oxide and Zirconium Oxide Thin Films for Fabricating Electronic Devices

Tuesday, October 20, 2015, 6:30 pm, Room Hall 3

Session: Electronic Materials and Processing Poster Session
Presenter: Jouantrey Spence, Alabama A&M University
Authors: J. Spence, Alabama A&M University
F. Cunningham, Alabama A&M University
R. Moten, Alabama A&M University
Z. Xiao, Alabama A&M University
Correspondent: Click to Email
Thin films of hafnium dioxide (HfO2) and zirconium oxide (ZrO2) are used widely as the gate oxide in fabricating integrated circuits (ICs) because of their high dielectric constants. In this research, we report the growth of hafnium dioxide (HfO2) and zirconium oxide (ZrO2) thin films using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using the HfO2 and ZrO2 thin films as the gate oxide. MOSFETs, CMOS inverters, and CMOS ring oscillator were fabricated, and the electrical properties of the fabricated devices were measured. The measurement results on the devices fabricated with the two films were compared, and will be reported in the Conference.