| AVS 62nd International Symposium & Exhibition | |
| Electronic Materials and Processing | Tuesday Sessions |
| Session EM-TuP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | Sylvie Rangan, Rutgers, the State University of New Jersey |
| Authors: | S. Rangan, Rutgers, the State University of New Jersey M. Kalyanikar, Rutgers, the State University of New Jersey J. Duan, Rutgers, the State University of New Jersey G. Liu, Rutgers, the State University of New Jersey R.A. Bartynski, Rutgers, the State University of New Jersey E. Andrei, Rutgers, the State University of New Jersey L. Feldman, Rutgers, the State University of New Jersey E. Garfunkel, Rutgers, the State University of New Jersey |
| Correspondent: | Click to Email |
Band alignment between materials and potential changes across thin films is of great importance for understanding electronic properties of multilayer structures and their resulting properties in devices. Although energy alignment and band bending has been studied for decades, an accurate profile of the potential across an ultrathin insulating layer (<10nm) has yet to be determined. In this work, we have developed a new approach to precisely measure the potential profile across Metal/Oxide/Semiconductor (MOS) stacks under in-situ gate-biasing conditions, using x-ray photoemission spectroscopy (XPS). Previous attempts of potential profile measurements have been limited to qualitative assertions due to the absence of controlled biasing. Here, interface dipoles and band bending at the oxide/semiconductor interface, as well as the effective potential across the oxide have been directly measured as a function of the bias applied between the semiconductor and the gate. This technique opens a large field of research, as it allows simultaneously a chemical mapping and a quantitative characterization of potential profiles in novel structures.