| AVS 62nd International Symposium & Exhibition | |
| Electronic Materials and Processing | Thursday Sessions |
| Session EM-ThM |
| Session: | Interconnects II |
| Presenter: | Michael Mutch, Pennsylvania State University |
| Authors: | M. Mutch, Pennsylvania State University P.M. Lenahan, Pennsylvania State University S.W. King, Intel Corporation |
| Correspondent: | Click to Email |
We utilize electron paramagnetic resonance (EPR) to study defects in porous, low-κ SiOC:H powders as a function of processing parameters. The powders were generated by mechanically removing the SiOC:H films from sililcon substrates. The SiOC:H powders studied have previously been investigated after remote hydrogen plasma (RP) and UV cures.[1] To better understand the role of RP and UV curing on defect chemistry, we utilize EPR measurements at each processing step.
First, EPR measurements were performed on a an SiOC:H powder before and after UV treatment. Prior to UV treatment, a spectrum with a zero-crossing g of 2.0027 with a line width of 4.5 Gauss is detected. The measured defect concentration prior to UV treatment is about 3x1015 cm-3. The zero-crossing g suggests a carbon dangling bond defect. Post UV treatment, a carbon dangling bond spectrum is detected with a corresponding defect concentration of 2.1x1017 cm-3.[1] The large increase in carbon dangling bond concentration post UV anneal suggests an incomplete removal of the sacrificial porogen resulting in carbon dangling bond defects.
Second, an SiOC:H powder is studied before and after remote hydrogen plasma (RP) and UV treatments. Via fast passage EPR, two overlaying signals are detected prior to RP and UV cures. The two signals are identical in line width and zero-crossing g to spectra which have been provisionally attributed to two carbon dangling bond centers termed Cdb1 and Cdb2 by Pomorski et al.[1] Pre RP and UV cure, the measured defect concentrations of Cdb1 and Cdb2 are 2.1x1017 cm-3 and 2x1015 cm3, respectively. Post RP (but prior to UV treatment), the Cdb2 signature is detected and has a defect concentration of 1.8x1015 cm-3. The Cdb1 signature, is not detected. This suggests that the hydrogenation of these films via RP is successful in removing some carbon dangling bonds. Post RP and UV cure, a defect with a line width of 11 Gauss and a zero-crossing g of 2.0028 is detected at a concentration of 5x1017 cm-3.[1] The post UV processed zero-crossing g close to that of the free-electron g suggests the presence of carbon dangling bond defects. Again, we tentatively attribute these defects to an incomplete removal of sacrificial porogens from the films.
[1] T. A. Pomorski et al., J. Appl. Phys. 115, 234508 (2014).