| AVS 62nd International Symposium & Exhibition | |
| Electronic Materials and Processing | Monday Sessions |
| Session EM+NS+PS-MoM |
| Session: | More Moore! Materials and Processes to Extend CMOS Another Decade |
| Presenter: | Emanuel Tutuc, The University of Texas at Austin |
| Correspondent: | Click to Email |
Vertical heterostructures consisting of atomic layers separated by insulators can open a window to explore the role of electron interaction in these materials, otherwise not accessible in single layer samples, as well as to explore device applications.
We describe here the realization of vertical heterostructures consisting of graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenides realized using a layer-by-layer transfer. In double bilayer graphene heterostructures separated by hBN dielectric [1] where the two layers are rotationally aligned the interlayer tunneling current measured as a function of interlayer bias reveals a gate-tunable resonance thanks to momentum conserving tunneling. [2, 3] We discuss potential device application based on these experimental observations, as well as metrics that allow a benchmarking of their performance.
We also discuss the realization and characterization of graphene-MoS2 heterostructures, which reveal a strong negative compressibility in the MoS2 layer as a result of electron-electron interaction. [4]
Work done in collaboration with Kayoung Lee, Babak Fallahazad, Sangwoo Kang, Stefano Larentis, Hema C. P. Movva, Sanjay K. Banerjee, Leonard F. Register, Takashi Taniguchi, and Kenji Watanabe, and with support from the NRI-SWAN Center, Office of Naval Research, and Intel Corp.
[1] “Chemical potential and quantum Hall ferromagnetism in bilayer graphene”, K. Lee, B. Fallahazad, J. Xue, D. C. Dillen, K. Kim, T. Taniguchi, K. Watanabe, E. Tutuc, Science 345, 58 (2014).
[2] “Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures”, B. Fallahazad, K. Lee, S. Kang, J. Xue, S. Larentis, C. Corbet, K. Kim, H. C. P. Movva, T. Taniguchi, K. Watanabe, L. F. Register, S. K. Banerjee, E. Tutuc, Nano Letters 15, 428 (2015).
[3] “Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET”, S. Kang, B. Fallahazad, K. Lee, H. C. P. Movva, K. Kim, C. Corbet, T. Taniguchi, K. Watanabe, L. Colombo, L. F. Register, E. Tutuc, S. K. Banerjee, IEEE Electron Device Letters 36, 405 (2015)
[4] “Band Offset and Negative Compressibility in Graphene-MoS2 Heterostructures”, S. Larentis, J. R. Tolsma, B. Fallahazad, D. C. Dillen, K. Kim, A. H. MacDonald, E. Tutuc, Nano Letters 14, 2039 (2014).