| AVS 62nd International Symposium & Exhibition | |
| Applied Surface Science | Thursday Sessions |
| Session AS-ThP |
| Session: | Applied Surface Science Poster Session |
| Presenter: | Simon Hutton, Kratos Analytical Limited, UK |
| Authors: | S.J. Hutton, Kratos Analytical Limited, UK T. Bendikov, Weizmann Institute of Science, Israel W. Boxford, Kratos Analytical Limited, UK S.C. Page, Kratos Analytical Limited, UK J.D.P. Counsell, Kratos Analytical Limited, UK A.J. Roberts, Kratos Analytical Limited, UK C.J. Blomfield, Kratos Analytical Limited, UK S.J. Coultas, Kratos Analytical Limited, UK |
| Correspondent: | Click to Email |
Thin polymer films are found in an enormous range of devices and have many applications from use in semi-conductors, displays and solar cells to corrosion protection and packaging. New ion sources such as the multi-mode Ar gas cluster ion source (GCIS) have revolutionised the study of such organic thin films by depth profiling with techniques such as X-ray photoelectron spectroscopy (XPS). As reported elsewhere the chemical composition of organic thin films may now be determined as a function of depth by a combination of XPS analysis and etching using massive Ar ions.
In this study we present results from GCIS XPS depth profiling of multi-layer organometallic thin films. The films consist of two well defined and iso-structural osmium and ruthenium polypridyl complexes. These complexes are deposited from solution in a sequence-dependent assembly regime leading to self-propagating molecular assemblies with distinct internal interfaces and composition. [1] The layer-by-layer deposition approach used here allows multiple building blocks to be incorporated into the film.
Depth profiling through the films using the GCIS allowed the structure to be confirmed and relative layer thicknesses to be tentatively compared. The depth profiles were carried out using optimised conditions for cluster formation and X-ray exposure was limited to reduce detrimental effects, including modification of the etch rate, noted elsewhere. [2]
[1] G. de Ruiter, M. Lahav, G. Evmenenko, P. Dutta, D. A. Cristaldi, A. Gulino and M. E. van der Boom, J. Am. Chem. Soc. 2013, 135, 16533-16544.
[2] P. Cumpson, J. F. Portoles, N. Sano, and A. J. Barlow, J. Vac. Sci. Technol. B 31(2), 2013.