| AVS 62nd International Symposium & Exhibition | |
| 2D Materials Focus Topic | Thursday Sessions |
| Session 2D-ThP |
| Session: | 2D Materials Focus Topic Poster Session |
| Presenter: | Barbara Nichols, U.S. Army Research Laboratory |
| Authors: | B. Nichols, U.S. Army Research Laboratory R. Ghosh, University of Texas at Austin S.K. Banerjee, University of Texas at Austin |
| Correspondent: | Click to Email |
The temperature-dependent Raman spectroscopy and photoluminescence mapping measurements of molybdenum disulfide (MoS2) layers grown on silicon oxide (SiO2) by chemical vapor deposition were performed. As grown, the MoS2 monolayers are shaped as either hexagons or triangles with smaller dendritic adlayers randomly distributed throughout the layer. Specifically, Raman and PL mapping of a 20 micron wide hexagon was performed at room temperature in air and in vacuum. In both air and vacuum, the Raman A1g – E2g separation was wider for the dendritic adlayers than for the monolayer MoS2 as well as a decreased PL intensity was observed for the dendrites when compared to the monolayer. Raman and PL mapping of the MoS2 hexagon revealed these trends remained as the temperature was decreased from room temperature to 4 K. At 4 K, differences between the dendrites and the monolayer MoS2 were mainly observed by the PL measurements. PL peak position shifts as much as 15 meV and peak shapes were observed for the A and B exciton transitions.