| AVS 62nd International Symposium & Exhibition | |
| 2D Materials Focus Topic | Monday Sessions |
| Session 2D+EM+MC+MS+NS-MoA |
| Session: | 2D Materials: Devices and Applications |
| Presenter: | Oriol López Sánchez, Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland |
| Authors: | O. López Sánchez, Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland G. Fiori, Università di Pisa, Italy G. Iannaccone, Università di Pisa, Italy D. Dumenco, Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland E. Charbon, Delft University of Technology, Netherlands |
| Correspondent: | Click to Email |
Avalanche photodiodes (APDs) are the semiconducting analogue of photomultiplier tubes offering very high internal current gain and fast response. APDs are interesting for a wide range of applications in communications, laser ranging, biological imaging, and medical imaging where they offer speed and sensitivity superior to those of classical p-n junction-based photodetectors. The APD principle of operation is based on photocurrent multiplication through impact ionization in reverse-biased p-n junctions. Here, we demonstrate APDs based on vertically stacked monolayer MoS2 and p-Si, forming an abrupt p-n heterojunction. With this device, we demonstrate carrier multiplication exceeding 1000 at 10 V reverse bias . Our devices show little degradation of SNR at high gains. These heterostructures allow the realization of simple and inexpensive high-performance and low-noise photon counters based on transition metal dichalcogenides.