| AVS 62nd International Symposium & Exhibition | |
| 2D Materials Focus Topic | Friday Sessions |
| Session 2D+EM+IS+NS+PS+SP+SS-FrM |
| Session: | Surface Chemistry of 2D Materials: Functionalization, Membranes, Sensors |
| Presenter: | Patrick Soukiassian, CEA, France |
| Correspondent: | Click to Email |
Graphene & silicon carbide (SiC) are advanced semiconductors having figures of merit scaling well above those of well-established ones [1,2]. Understanding/mediating SiC and graphene surfaces & interfaces properties are of central importance toward functionalization and applications. As a 2D material, graphene is a single atomic layer of carbon atoms in a sp2 bonding configuration. Therefore, functionalization remains challenging since interacting too strongly with the graphene atomic layer may change its bonding configuration and properties. Instead, interacting with the SiC substrate offers an alternative approach. The 1st case of hydrogen-induced metallization of a semiconductor surface has been shown for a 3C-SiC(001) surface [3]. Here, combining investigations using advanced experimental techniques such as STM/STS, vibrational & 3rd generation synchrotron radiation-based photoelectron spectroscopies together with state-of-art calculations will be presented and discussed. It includes: i) the 1st evidence of H/D-induced nanotunnel opening at a semiconductor sub-surface shown here for SiC [4]. Depending on H coverage, these nanotunnels could either be metallic or semiconducting. Dangling bonds generated inside the nanotunnels offer a promising template to capture atoms or molecules. These features open nano-tailoring capabilities towards advanced applications in electronics, chemistry, storage, sensors or biotechnology. Understanding & controlling such a mechanism open routes towards selective surface/interface functionalization of epitaxial graphene [4]. ii) The role of H interaction with graphene on SiC dust grains in polycyclic aromatic hydrocarbons (PAH) formation in the interstellar space with a possible route toward prebiotic roots of life in the universe [5].
1–W. Lu, P. Soukiassian, J. Boeckl “Graphene: fundamentals and functionalities” MRS Bull. 37, 1119 (2012)
2–P. Soukiassian “Will graphene be the material of the 21th century?” MRS Bull. 37, 1321 (2012)
3-V. Derycke, P. Soukiassian, F. Amy, Y.J Chabal, M. D’angelo, H. Enriquez, M. Silly, “Nanochemistry at the atomic scale revealed in hydrogen-induced semiconductor surface metallization”, Nature Mat.2, 253 (2003)
4–P. Soukiassian, E. Wimmer, E. Celasco, Cl. Giallombardo, S. Bonanni, L. Vattuone, L. Savio, A. Tejeda, M. Silly, M. D’angelo, F. Sirotti, M. Rocca “Hydrogen-induced nanotunnel opening within semiconductor subsurface” Nature Com. 4, 2800 (2013)
5–P. Merino, M. Švec, J.I. Martinez,P. Jelinek, P. Lacovig, M. Dalmiglio, S. Lizzit, P. Soukiassian, J. Cernicharo, J.A. Martin-Gago “Graphene etching on SiC grains as a path to interstellar PAHs’ formation” Nature Com. 5, 3054 (2014)