| AVS 62nd International Symposium & Exhibition | |
| 2D Materials Focus Topic | Wednesday Sessions |
| Session 2D+EM+IS+MC+NS+SP+SS-WeA |
| Session: | Dopants and Defects in 2D Materials |
| Presenter: | Kolyo Marinov, Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland |
| Authors: | K.M. Marinov, Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland D. Ovchinnikov, Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland D. Dumcenco, Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland A. Kis, Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland |
| Correspondent: | Click to Email |
We present the characterization of grain boundaries in polycrystalline CVD-grown MoS2 films. Epitaxial growth on sapphire substrates is achieved leading to preferred orientation of the domains, which is confirmed by transmission electron microscopy experiments. Using Scanning Kelvin probe microscopy the local potential drop across the three predominant types of grain boundaries in field effect transistors is investigated. These measurements demonstrate that the interfaces between single grains do not degrade the electrical conductivity, which is due to the well aligned growth of the single domains. Furthermore, the relatively high mobility of electrons in the polycrystalline material stays constant even in devices with channels of 80 µm containing multiple grains, separated by grain boundaries. Our approach is a step forward to fabrication of large-area, uniform and high quality single-layer CVD MoS2.